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Overview The M27C1001-10F1 is a high-performance 1-Megabit ultraviolet erasable and electrically programmable read-only memory (UV EPROM) organized as 128K words by 8 bits.
Read the full description ↓1x M27C1001-10F1 UV EPROM Memory IC
The M27C1001-10F1 is a high-performance 1-Megabit ultraviolet erasable and electrically programmable read-only memory (UV EPROM) organized as 128K words by 8 bits. Specifically engineered for demanding applications that require non-volatile data storage with the flexibility of field reprogramming, this integrated circuit is an essential component for technicians, engineers, and hobbyists restoring vintage arcade machines, retro personal computers, musical synthesizers, and legacy industrial control systems. Encased in a robust 32-lead ceramic dual in-line package (CDIP) complete with a quartz window, this memory IC allows complete data erasure via exposure to ultraviolet light, enabling repeated use during prototyping and development cycles.
Built on advanced CMOS floating-gate technology, the M27C1001-10F1 delivers exceptional performance while maintaining minimal power consumption compared to older NMOS equivalents. The device features a fast access time of 100 ns, making it fully compatible with high-speed 8-bit and 16-bit microprocessors that demand quick instruction fetches and data lookups. Programming requires a dedicated programming voltage distinct from the standard operating supply, ensuring accidental overwrites are prevented during normal system operation. The quartz window on top of the ceramic package is transparent to UV light with a wavelength of approximately 2537 angstroms, requiring a recommended exposure dose of 15 watt-seconds per square centimeter for complete bit erasure.
Organization: 128K x 8 bits
Memory Size: 1 Mbit
Access Time: 100 ns
Package Type: 32-lead Ceramic DIP (CDIP) with Quartz Window
Operating Supply Voltage: 5V ± 10%
Programming Voltage: 12.75V
Operating Temperature Range: 0°C to 70°C
Data Retention: Typically greater than 20 years
Interface Type: Parallel asynchronous
Erasure Method: Ultraviolet light exposure
Vintage computer repair and ROM image replacement
Arcade game board restoration and custom ROM burning
Industrial machinery controller firmware updates
Embedded systems development requiring non-volatile storage
Automotive ECU tuning and legacy dashboard instrumentation
Musical instrument synthesizer voice and OS ROM upgrades
When designing this EPROM into custom PCBs or replacing failed ICs in vintage equipment, ensure the target socket matches the 32-CDIP pinout configuration. To protect the stored data from accidental erasure due to ambient sunlight or fluorescent lighting, always apply an opaque label over the quartz window after programming and verification. Ensure that programming equipment supports the specific algorithm required for the M27C1001 family, utilizing the correct programming voltage of 12.75V to avoid damaging the internal cells. Handle the ceramic package with ESD precautions and avoid touching the quartz window directly to prevent oil buildup that can interfere with UV light penetration during future erasure cycles.
1x M27C1001-10F1 UV EPROM Memory IC
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